Disputas: Mayandi Jeyanthinath

Prøveforelesning

Bedømmelseskomité

Atilla Aydinli, Bilkent University, Tyrkia
Anne Borg, NTNU
Ola Sveen, Universitetet i Oslo

Leder av disputas:  Gunnar Løvhøiden

Veileder:  Professor Terje G Finstad, professor Andrej Kuznetsov

Sammendrag

Si and Ge nanostructures (here nanocrystals/nanoclusters) embedded in SiO₂ films and/or Al₂O₃ films were fabricated using ion implantation and sputtering. The nanostructures were formed by segregation annealing. Electrical and optical properties of these films were studied with applications in mind. The main tasks such as size distributions, shape of the nanostructures are challenging issues of vital importance for applications. The research has been carried out at the Mina-Lab, at Forskningsparken as well as at the Physics department. This PhD thesis has been written within the area of Physical Electronics/Nanotechnology.

In this thesis we have developed a new method for the studying of Si nanostructures in SiO₂ films by atomic force microscopy. These embedded structures have applications in the fabrication of future non-volatile memory devices and opto-electronic devices. When the film is additionally doped with Er ions, it can be used in opto-electronic devices for the telecommunication. The study shows a distinct difference with films Si and Ge nanostructures respectively for the same emission wavelength, which is attributed to difference in the local environment of the Er ion in the different films. Our understanding of the films will pave the way for more investigations of the underlying physics.

Kontaktperson

For mer informasjon, kontakt Gyri Nørbech.