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Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, J
[Show all 7 contributors for this article]
(2019).
Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-SiC.
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Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José
[Show all 8 contributors for this article]
(2019).
Electrical charge-state identification and emission intensity modulation of the silicon vacancy in 4H-SiC.
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Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José
[Show all 7 contributors for this article]
(2019).
Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-Si.
Show summary
The high-spin ground state and bright single-photon emission of the silicon vacancy (VSi) in 4H-SiC offer exciting possibilities for quantum technology and spintronics applications, especially as both are available at room temperature [1,2]. However, quantum compatibility only exists for the singly negative VSi, and single-photon counts are still too low to realize efficient spin-photon interfaces without resorting to complex nanofabrication methods [3]. Herein, we demonstrate enhanced optical emission from VSi using Schottky barrier diode (SBD) formation, and attribute our findings to increased occupancies of VSi-1.
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Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Ul Hassan, Jawad; Bergman, J. P. & Nipoti, Roberta
[Show all 8 contributors for this article]
(2018).
Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing.
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Ayedh, Hussein Mohammed Hussein; Azarov, Alexander; Galeckas, Augustinas; Svensson, Bengt Gunnar & Monakhov, Edouard
(2017).
DLTS study of the interstitial carbon–oxygen complex in
proton irradiated p-type Si.
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Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar
(2017).
Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC
.
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Venkatachalapathy, Vishnukanthan; Ayedh, Hussein Mohammed Hussein; Vajeeston, Ponniah; Vines, Lasse; Monakhov, Edouard & Kuznetsov, Andrej
(2017).
Quest for Si based multi-junction solar cells covering the entire solar spectrum.
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Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar
(2017).
Diffusion of the Carbon Vacancy in a-cut and c-cut n-type 4H-SiC.
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Ayedh, Hussein Mohammed Hussein; Iwamoto, Naoya; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar
(2016).
Formation of D-center in p-type 4H-SiC epi-layers during high temperature processing
.
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Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar
(2015).
Controlling the Carbon Vacancy Concentration in 4H-Silicon Carbide Subjected to High Temperature Treatment.
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Ayedh, Hussein Mohammed Hussein; Hallen, Anders & Svensson, Bengt Gunnar
(2015).
Annihilation of Carbon Vacancies in 4H-SiC epi-layers by near-surface implantation of C, Al and Si ions.
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Svensson, Bengt Gunnar; Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Iwamoto, Naoya; Hallén, Anders & Niputo, R
(2014).
Point Defects in 4H-Si.
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Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar
(2014).
Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide.
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Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar
(2013).
Formation of carbon vacancy during high-temperature treatment of 4H-SiC.
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Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar
(2013).
Formation of Carbon Vacancy in 4H-SiC During
High-Temperature Treatment.
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Ayedh, Hussein Mohammed Hussein
(2016).
Controlling the Carbon Vacancy in 4H-Silicon Carbide.
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