madsei

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Academic interests

Semiconductor physics, particularly electronic characterization of defects in semiconductors and Transparent Conductive Oxides (TCO).

Methodology development in characterization of defects and their electronic states in semiconductors.

Materials: Si:Fe, ZnO and Ga₂O₃.

Experimental methods: CV, IV, DLTS, TSCAP, X-ray absorption

Materials, Energy and Nanotechnology (MENA1000)

2012 - 2014: MSc from the Materials, Energy and Nanotechnology program with master thesis Band gap engineering of the ZnO/Si heterojunction using amorphous buffer layers

2008 - 2011: BSc from the Materials, Energy and Nanotechnology program

Tags: Semiconductors, SMN, TCO, DLTS, Ga2O3, LENS, ZnO

Ingebrigtsen, Mads Eide; Kuznetsov, Andrej; Svensson, Bengt Gunnar; Alfieri, Giovanni; Mihaila, Andrei & Vines, Lasse (2019). Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures . Journal of Applied Physics. ISSN 0021-8979. 125(18), p. 185706-7–185706-1. doi: 10.1063/1.5088655. Full text in Research Archive
Ingebrigtsen, Mads Eide; Kuznetsov, Andrej; Svensson, Bengt Gunnar; Alfieri, Giovanni; Mihaila, Andrei & Badstübner, U. [Show all 8 contributors for this article] (2019). Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3. APL Materials. ISSN 2166-532X. 7(2), p. 022510-1–022510-10. doi: 10.1063/1.5054826. Full text in Research Archive
Ingebrigtsen, Mads Eide; Varley, J.B.; Kuznetsov, Andrej; Svensson, Bengt Gunnar; Alfieri, Giovanni & Mihaila, A. [Show all 8 contributors for this article] (2018). Iron and intrinsic deep level states in Ga2O3. Applied Physics Letters. ISSN 0003-6951. 112(4). doi: 10.1063/1.5020134. Full text in Research Archive
Ingebrigtsen, Mads Eide; Vines, Lasse; Alfieri, G; Mihaila, A.; Badstübner, U. & Svensson, Bengt Gunnar [Show all 7 contributors for this article] (2017). Bulk β-Ga2O3 with (010) and (201) surface orientation: Schottky contacts and point defects. Materials Science Forum. ISSN 0255-5476. 897 MSF, p. 755–758. doi: 10.4028/www.scientific.net/MSF.897.755. Full text in Research Archive

Vines, Lasse; Ingebrigtsen, Mads Eide; Zimmermann, Christian; Rønning, Vegard & Kuznetsov, Andrej (2019). Electrically Active Defects in β-Ga2O3 .
Bathen, Marianne Etzelmüller; Ingebrigtsen, Mads Eide; Olsen, Vegard Skiftestad; Rønning, Vegard & Vines, Lasse (2018). Omvisning for studieprogrammene FA og ELITE .
Bergum, Kristin; Borgersen, Jon Arthur; Ellingsen, Josef Gert Åsheim; Frodason, Ymir Kalmann; Galeckas, Augustinas & Ingebrigtsen, Mads Eide [Show all 8 contributors for this article] (2017). Omvisning MiNaLab.
Bergum, Kristin; Borgersen, Jon Arthur; Ellingsen, Josef Gert Åsheim; Hallén, Anders; Ingebrigtsen, Mads Eide & Kuznetsov, Andrej (2017). Omvisning MiNaLab, Slemdal skole 4. trinn.
Frodason, Ymir Kalmann; Bergum, Kristin; Sky, Thomas Neset; Ingebrigtsen, Mads Eide; Borgersen, Jon & Ellingsen, Josef Gert Åsheim [Show all 8 contributors for this article] (2017). MiNa-Lab tour highlighting LENS activities.
Ingebrigtsen, Mads Eide; Vines, Lasse; Alfieri, Giovanni; Mihaila, Andrei; Svensson, Bengt Gunnar & Kuznetsov, Andrej (2017). Donor states and deep levels in bulk and epitaxial β-Ga2O3 .
Vines, Lasse; Ingebrigtsen, Mads Eide; Alfieri, Giovanni; Mihaila, Andrei; Svensson, Bengt Gunnar & Kuznetsov, Andrej (2017). Deep level defects in bulk and epi-grown β-Ga2O3.
Ingebrigtsen, Mads Eide (2019). Electrical characterization and identification of deep levels in beta-Ga2O3. Universitetet i Oslo. ISSN 1501-7710.

Published Nov. 6, 2014 9:58 AM - Last modified Oct. 31, 2015 6:15 PM

No ongoing projects