Our latest publications

2023

  • H. Arslan, I. Aulika, A. Sarakovskis, L. Bikse, M. Zubkins, A. Azarov, J. Gabrusenoks, J. Purans. Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics. Vacuum 211, 111942 (2023).

  • A. Azarov, A. Galeckas, F. C.-C. Ling and A. Kuznetsov. Tuning defect-related optical bands by channeling implants in semiconductors. J. Phys. D: Appl. Phys. 56, 035103 (2023).

  • A. Azarov, J. García Fernández, J. Zhao, F. Djurabekova, H. Flyura, H. He, R. He, Ø. Prytz, L. Vines, U. Bektas, P. Chekhonin, N. Klingner, G. Hlawacek, A. Kuznetsov. Universal radiation tolerant semiconductor. Nature Communications 14, 4855 (2023).

  • A. Azarov, J-H. Park, D-W. Jeon, A. Kuznetsov. High mobility of intrinsic defects in α-Ga2O3. Appl. Phys. Lett. 122, 182104 (2023).

  • A. Azarov, V. Venkatachalapathy, I-H. Lee, A. Kuznetsov. Thermal versus radiation-assisted defect annealing in β-Ga2O3. J. Vac. Sci. Technol. A 41, 023101 (2023).

  • M. E. Bathen, G. M. Selnesaunet, M. J. Enga, S. B. Kjeldby, J. Müting, L. Vines, Lasse; U. Grossner. Charge State Control Over Point Defects in SiC Devices. Defect and Diffusion Forum, 425, 35-42 (2023).
  • J. Borgersen, R. Karsthof, V. Rønning, L. Vines, H. Wenckstern, M. Grundmann, A. Kuznetsov, and K. M. Johansen. Origin of enhanced conductivity in low dose ion irradiated oxides. AIP Advances 13, 015211 (2023).

  • A. Galeckas, R. M. Karsthof, G. Kingsly, A. Kok, M. E. Bathen, L. Vines and A. Kuznetsov. Cross-sectional carrier lifetime profiling and deep level monitoring in silicon carbide films exhibiting variable carbon vacancy concentrations. Phys. Status Solidi A, 2200449 (2023).

  • M. Ghezellou, P. Kumar, M. E. Bathen, R. Karsthof, E. Ö. Sveinbjörnsson, U. Grossner, J. Peder Bergman, L. Vines, and J. Ul-Hassan. The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers. APL Mater 11, 031107 (2023).

  • B. Hammann, N. Aßmann, J. Schön, W. Kwapil, F. Schindler, S. Roder, E. Monakhov, M.C. Schubert. Understanding the impact of the cooling ramp of the fast-firing process on light- and elevated-temperature-induced degradation. Solar Energy Materials and Solar Cells 259, 112462 (2023).

  • B. Hammann, N. Aßmann, P. M. Weiser, W. Kwapil, T. Niewelt, F. Schindler, R. Søndenå, E. Monakhov, M.C. Schubert. The Impact of Different Hydrogen Configurations on Light- and Elevated-Temperature- Induced Degradation. IEEE Journal of Photovoltaics 13, 224-235 (2023).

  • Y. K. Hommedal, Y. K. Frodason, L. Vines, and K. M. H. Johansen. Trap-limited diffusion of Zn in β−Ga2O3. Phys. Rev. Materials 7, 035401 (2023).

  • S. B. Kjeldby, P. D. Nguyen, J. García-Fernández, K. Haug, A. Galeckas, I. J. T. Jensen,   A. Thøgersen, L. Vines and Ø. Prytz. Optical properties of ZnFe2O4 nanoparticles and Fe-decorated inversion domain boundaries in ZnO. Nanoscale Adv., 5, 2102-2110 (2023).

  • A. Langørgen, Y. K. Frodason, R. M. Karsthof, H. Von Wenckstern, I. J. T Jensen, L. Vines, M. Grundmann. Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy. J. Appl. Phys. 134, 015701 (2023).

  • A. Macková, A. Jagerová, O. Lalik, R. Mikšová, D. Poustka, J. Mistrík, V. Holý, J. D. Schutter, U. Kentsch, P. Marvan, A. Azarov, A. Galeckas. Combined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysis. Applied Surface Science 610, 155556 (2023).

  • C. Mieszczynski, P. Jozwik, K. Skrobas, K. Stefanska-Skrobas, R. Ratajczak, J. Jagielski, F. Garrido, E. Wyszkowska, A. Azarov, K. Lorenz, E. Alves. Combining MD-LAMMPS and MC-McChasy2 codes for dislocation simulations of Ni single crystal structure. Nuclear Instruments and Methods in Physics Research B 540, pp. 38-44 (2023).

  • V. Ney, B. Henne, M. de Souza, W. Jantsch, K. M. Johansen, F. Wilhelm, A. Rogalev, and A. Ney. Valence state, lattice incorporation, and resulting magnetic properties of Ni in Zn/Co-based magnetic oxides. Journal of Applied Physics 133, 033904 (2023).

  • M. Nowak, K. Mulewska, A. Azarov, L. Kurpaska, A. Ustrzycka. A peridynamic elasto-plastic damage model for ion-irradiated materials. International Journal of Mechanical Sciences 237, 107806 (2023).

  • A. Y. Polyakov, A. I. Kochkova, A. Langørgen, L. Vines, A. Vasilev, I.V. Shchemerov, A. A. Romanov, S. L. Pearton. On the possible nature of deep centers in Ga2O3. J. Vac. Sci. Technol. A 41, 023401 (2023).

  • K. K. Saxegaard, L. Vines, E. Monakhov, K. Bergum. Characteristics of ZnON films and heterojunction diodes with varying O:N ratios. Thin Solid Films 782, 139968 (2023).

  • X. Wang, C. Zimmermann, M. Titze, V. Niaouris, E. R. Hansen, S. H. D'Ambrosia, L. Vines, E. S. Bielejec, K-M. C. Fu. Properties of Donor Qubits in ZnO Formed by Indium-Ion Implantation. Physical Review Applied 19, 054090 (2023).

  • E. Wyszkowska, C. Mieszczynski, L. Kurpaska, A. Azarov, W. Chromiński, I. Jóźwik, A. Esfandiarpour, A. Kosińska, D. Kalita, R. Diduszko, J. Jagielski, S. T. Nori, M. Alava. The Fe addition as an effective treatment for improving the radiation resistance of fcc NixFe1-x single-crystal alloys. Journal of Nuclear Materials 584, 154565 (2023).

  • E. Wyszkowska, C. Mieszczynski, L. Kurpaska, A. Azarov, I. Jóźwik, A. Kosińska, W. Chromiński, R. Diduszko, W. Y. Huo, I. Cieślik, J. Jagielski. Tuning heterogeneous ion-radiation damage by composition in NixFe1−x binary single crystals. Nanoscale 15, 4870-4881 (2023).

2022

  • S. Adeojo, J. Malherbe, A. Azarov, O. Odutemowo, E. Njoroge, H. Abdelbagi, S. Mpelane, and T. Hlatshwayo. Effects of implantation temperature and annealing on structural evolution and migration of Se into glassy carbon.  Solid State Sciences 129, 106914 (2022).
  • Azarov, K. Bazioti, V. Venkatachalapathy, V. Ponniah, E. Monakhov, and A. Kuznetsov. Disorder-induced ordering in gallium oxide polymorphs. Phys. Rev. Lett. 128, 15704e (2022).
  • A. Azarov, V. Venkatachalapathy, P. Karaseov, A. Titov, K. Karabeshkin, A. Struchkov, and A. Kuznetsov. Interplay of the disorder and strain in gallium oxide. Scientific Reports 12, 15366 (2022).
  • J. Garcia- Fernandez, S. B. Kjeldby, P.D. Nguyen, Ole B. Karlsen, L. Vines, and Ø. Prytz. Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3. Applied Physics Letters. 121, 191601 (2022).
  • R. M. Karsthof, M. E. Bathen, A. Kuznetsov, and L. Vines. Formation of carbon  interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics 131, 035702 (2022).
  • R. M. Karsthof, Y. K. Frodason, A. Galeckas, P. M. Weiser, V. Zviagin, and M. Grundmann. Light absorption and emission by defects in doped nickel oxide. Adv. Photonics Res., 3, 2200138 (2022).
  • S .B. Kjeldby, A. Azarov, P. D. Nguyen, V. Venkatachalapathy, R. Mikšová, A. MacKová, A. Kuznetsov, Ø. Prytz, and L. Vines. Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide. Journal of Applied Physics 131, 125701 (2022).
  • A. Langørgen, C. Zimmermann, Y. K. Frodason, E. V. Førdestrøm, P. H. Weiser, R. M. Karsthof, J. B. Varley, and L. Vines. Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3. Journal of Applied Physics 131, 115702 (2022).
  • J. Mayandi, T. G. Finstad, M. Stange, G. C. Vasquez, M. F. Sunding, O. M. Løvvik, S. Diplas, and P. A. Carvalho. Controlling the electrical properties of reactively sputtered high entropy alloy CrFeNiCoCu films, Journal of Electronic Materials 51, 803 (2022).
  • J. Mayandi, T. G. Finstad, Ø. Dahl, V. Ponniah, M. Schrade, Ole M. Løvvik, S. Diplas, and P. A. Carvalho. Thin films made by reactive sputtering of high entropy alloy FeCoNiCuGe: Optical, electrical and structural properties. Thin Solid Films 744, 139083 (2022).
  • V. S. Olsen, Y. K. Frodason, Y. K. Hommedal, D. M. Nielsen, P. M. Weiser, K. M. H. Johansen, I. H. Lee, A. Kuznetsov, and L. Vines. Li and group-III impurity doping in ZnSnN2: Potential and limitations. Phys. Rev. Materials 6, 124602 (2022).
  • J. U. Rahman, P. Almeida, Carvalho, N. Soltani, M. Schrade, A. E. Gunnæs, and T. G. Finstad. Synthesis, microstructure, and thermoelectric properties of Sb-based high entropy alloys. Intermetallics 143, 107495 (2022).
  • B. P. Reed, M. E. Bathen, J. W. R. Ash, C. J. Meara, A. A. Zakharov, J. P. Goss, J. W. Wells, D. A. Evans, and S. P. Cooil. Diamond (111) surface reconstruction and epitaxial graphene interface. Phys. Rev. B 105, 205304 (2022).

2021

  • B. L. Aarseth, C. S. Granerød, A. Galeckas, A. Azarov, P. D. Nguyen, Ø. Prytz, and L. Vines. Formation and functionalization of Ge-nanoparticles in ZnO, Nanotechnology 32, 505707 (2021).
  • G. Alfieri, A. Mihaila, P. Godignon, J. B. Varley, and Lasse Vines. Deep level study of chlorine-based dry etched beta - Ga2O3. Journal of Applied Physics 130, 025701 (2021).
  • M. Amati, L. Gregoratti, P. Zeller, M. Greiner, M. Scardamaglia, B. Junker, T. Russ, U. Weimar, N. Barsan, M. Favaro, A. Alharbi, I.J.T Jensen, A. Ali, B. Belle. Near ambient pressure photoelectron spectro-microscopy: from gas-solid interface to operando devices. J. Phys. D: Appl. Phys. 54, 542021 (2021).
  • N. Assmann, C. Persson, A. Kuznetsov, and E. Monakhov. Fine structure in electronic  transitions attributed to nitrogen donor in silicon carbide. Appl. Phys. Lett. 119, 262101 (2021).
  • A. Azarov, V. Venkatachalapathy, L. Vines, E. Monakhov, I.-H. Lee, A. Kuznetsov. Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification. Appl. Phys. Lett. 119, 182103 (2021).
  • A. Azarov, V. Venkatachalapathy, E. Monakhov, A. Kuznetsov. Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements. Appl. Phys. Lett.  118, 232101 (2021).
  • H.M. Ayedh, K.-E. Kvamsdal, V. Bobal, A. Hallén, F.C.C. Ling, A. Kuznetsov. Carbon vacancy control in p+-n silicon carbide diodes for high voltage bipolar applications. J. Phys. D: Appl. Phys 54, 455106 (2021).

     

  • E.M. Baba, P.M. Weiser, E.Ö. Zayim, and S. Karazhanov. Temperature-dependent photochromic performance of yttrium oxyhydride thin films. Phys. Status Solidi RRL 15, 2000459 (2021).
  • M.E. Bathen, A. Galeckas, R.M. Karsthof, A. Delteil, V. Sallet, A. Kuznetsov, L. Vines. Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Phys. Rev. B. 104, 045120 (2021).
  • M.E. Bathen, L. Vines. Manipulating single-photon emission from point defects in diamond and silicon carbide. Adv. Quantum Technol. 4, 2100003 (2021).
  • A.K. Behera, C. Harris, D. Pete, C. Delker, P.E. Vullum, M. Benthem Muñiz, O. Koybasi, T. Taniguchi, K. Watanabe, B. Belle, S. Das. High-performance and ultralow-noise two-dimensional heterostructure field-effect transistors with one-dimensional electrical contacts. ACS Appl. Electron. Mater. 3, 4126--4134 (2021).
  • J. Bonkerud, C. Zimmermann, F. Herklotz, P.M. Weiser, C. Seiffert, E.F. Verhoeven, L. Vines, and E. Monakhov. Electrically-active defects in reduced and hydrogenated rutile TiO2. Semicond. Sci. Technol. 36, 014006 (2021).
  • J. Bonkerud, C. Zimmermann, P. M. Weiser, L. Vines, and E. Monakhov. On the permittivity of titanium dioxide. Scientific Reports 11, 12443 (2021).
  • J. Borgersen, K. M. H. Johansen, L. Vines, H. von Wenckstern, M. Grundmann, and A. Kuznetsov. Fermi level controlled point defect balance in ion irradiated indium oxide. Journal of Applied Physics 130, 085703 (2021).
  • A. Durand, Y. Baron, W. Redjem, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Kuznetsov, J.-M. Gérard, I. Robert-Philip, M. Abbarchi, V. Jacques, G. Cassabois and A. Dréau. Broad diversity of near-infrared single- photon emitters in silicon. Phys. Rev. Lett. 126, 083602 (2021).
  • M. Getz, M. Povoli, and E. Monakhov. Effect of the native oxide on the surface passivation of Si by Al2O3, Journal of Applied Physics 129, 205701 (2021).
  • I.J.T. Jensen, A. Ali, P. Zeller, A. Patrick, S.Matteo, M. Schrade, P.E. Vullum, M. Benthem Muñiz, P. Bisht, T. Taniguchi, K. Watanabe, M. Kenji; B.R. Mehta, L. Gregoratti, B. Belle. Direct observation of charge transfer between NOx and monolayer MoS2 by operando scanning photoelectron microscopy. ACS Appl. Nano Mater. 4, 3319--3324 (2021).
  • A. Kaźmierczak-Bałata, L. Grzadziel, M. Guziewicz, V. Venkatachalapathy, A. Kuznetsov, and M. Krzywiecki. Correlations of thermal properties with grain structure, morphology, and defect balance in nanoscale polycrystalline ZnO films. Applied Surface Science 546, 149095 (2021).
  • E.S. Köksal, I. Põldsalu, H. Friis, S. Mojzsis, M. Bizzarro, I. Gözen. Spontaneous formation of prebiotic compartment colonies on Hadean Earth and pre-Noachian Mars. BioRxiv (2021). 
  • M. Linnarsson, L. Vines and A. Hallen. Influence from the electronic shell structure on the range distribution during channeling of 40-300 keV ions in 4H-SiC. Journal of Applied Physics 130, 075701 (2021).
  • J. Mayandi, A.M. Lind, M.F. Sunding, M. Schrade, A.C. Cerdeira, M.S.S Stange, M.R. Dias, B. Belle, T.G. Finstad, L. Pereira, S. Diplas, P.A. Carvalho. Partial oxidation of high entropy alloys: A route towards nanostructured ferromagnets. Materialia 101250 (2021).
  • J. Mayandi, M. Schrade, P. Vajeeston, S. Ponniah, M.S.S. Stange, A.M. Lind, M.F. Sunding, D.M. Fleissner, J. Deuermeier, E. Fortunato, O.M. Løvvik, A. Ulyashin, S. Diplas, P.A. Carvalho, T.G. Finstad. High entropy alloy CrFeNiCoCu sputtered films. arXiv (2021).
  • J. Mayandi, R.K. Madathil, C. Abinaya, K. Bethke, V. Venkatachalapathy, K. Rademann, T.E. Norby, and T. Finstad. Al-doped ZnO prepared by co-precipitation method and its thermoelectric characteristics. Materials Letters 288, 129352 (2021).
  • J. Müting, V. Bobal, L. Vines, and U. Grossner. Phosphorus implantation into 4H-SiC at room and elevated temperature. Semicond. Sci. Technol. 36, 065002 (2021).
  • M. Nyborg, A. Azarov, K. Bergum, E. Monakhov. Deposition and characterization of lithium doped direct current magnetron sputtered Cu2O films. Thin Solid Films 722, 138573 (2021).
  • M. Nyborg, K. Karlsen, K. Bergum, and E. Monakhov. Dominant acceptors in Li doped, magnetron deposited Cu2O films. Mater. Res. Express 8, 125903 (2021).
  • M. Nyborg, I. Kolevatov, G. C. Vásquez, K. Bergum, and E. Monakhov. Dominant defects and carrier transport in single crystalline cuprous oxide: A new attribution of optical transitions. Journal of Applied Physics 130, 175701 (2021).
  • V.S. Olsen, V. Øversjøen, D. Gogova-Petrova, B. Pecz, A. Galeckas, J.A. Borgersen, K. Karlsen, L. Vines, A. Kuznetsov. ZnSnN2 in real space and k-space: Lattice constants, dislocation density, and optical band gap. Adv. Opt. Mater. 9, 2100015 (2021).
  • J.M. Polfus, M.B. Muñiz, A. Ali, D. Barragan-Yani, P.E. Vullum, M.F. Sunding, T. Taniguchi, K. Watanabe, B. Belle. Temperature-dependent adhesion in van der Waals heterostructures. Adv. Mater. Interfaces 8, 2100838 (2021).
  • I. Poldsalu, E.S. Köksal, I. Gözen. Mixed fatty acid-phospholipid protocell networks. BioRxiv (2021). 
  • H. I. Røst, B. P. Reed, F. S. Strand, J. A. Durk, D. A. Evans, A. Grubišić-Čabo, G. Wan, M. Cattelan, M. J. Prieto, D. M. Gottlob, L. C. Tănase, L. de S. Caldas, T. Schmidt, A. Tadich, B. C. C. Cowie, R. K. Chellappan, J. W. Wells, and S. P. Cooil. A simplified method for patterning graphene on dielectric layers, ACS Appl. Mater. Interfaces, 13, 31, 37510–37516 (2021).
  • H. I. Røst, R. K. Chellappan, F. S. Strand, A. Grubišić-Čabo, B. P. Reed, M. J. Prieto, L. C. Tǎnase, L. d S. Caldas, T. Wongpinij, C. Euaruksakul, T. Schmidt, A. Tadich, B. C. C. Cowie, Z. Li, S. P. Cooil, and J. W. Wells. Low-temperature growth of graphene on a semiconductor, J. Phys. Chem. C  125, 7, 4243–4252 (2021).
  • X. Song, H. Riis, Ø. Prytz, T. Finstad. Metallization of ZnSb and contact resistance. J. Appl. Phys. 130, 025107 (2021).
  • K. Spustova, E.S. Köksal, A. Ainla, and I. Gözen. Subcompartmentalization and pseudo-division of model protocells. Small 17, 2005320 (2021).
  • T. Tengchaisri, D. Bootkul, S. Intarasiri, U. Tippawan, and A. Kuznetsov. Coloration changes in natural ruby induced by oxygen ion implants correlated with cathodoluminescence data. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 502, 29-36 (2021).
  • A. Zaborowska, L. Kurpaska, M. Clozel, E.J. Olivier, J.H. O'Connell, M. Vanazzi, F. Di Fonzo, A. Azarov, I. Jóźwik, M. Frelek-Kozak, R. Diduszko, J.H. Neethling, J. Jagielski. Absolute radiation tolerance of amorphous alumina coatings at room temperature. Ceram. Int. 47, 34740-34750 (2021).

    2020  

  • T. Aarholt, Y.K. Frodason, and Ø. Prytz. Imaging defect complexes in scanning transmission electron microscopy: Impact of depth, structural relaxation, and temperature investigated by simulations. Ultramicroscopy 209, 112884 (2020).
  • S. Abad, G.C. Vasquez, L. Vines, and R. Ranchal. Use of Ga2O3[1 0 0] monocrystals as substrates for the synthesis of GaFeO3 thin films. Materials Letters 261, 126949 (2020).

  • A. Ali, O. Koybasi, W. Xing, D.N. Wright, D. Varandani, T. Taniguchi, K. Watanabe, B.R. Mehta, B. Belle. Single digit parts-per-billion NOx detection using MoS2/hBN transistors. Sens. Actuator A Phys. 315 112247 (2020).

  • C.  Abinaya, K. Bethke, V. Andrei, J. Baumann, B. Pollakowski-Herrmann, B. Kanngießer, B. Beckhoff, G.C. Vasquez, J. Mayandi, T. Finstad, and K. Rademann. The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films. RSC Adv 10, 29394-29401 (2020).  
  • M.E. Bathen, A. Galeckas, J. Coutinho, and L. Vines. Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC. Journal of Applied Physics 127, 085701 (2020).
  • M.E. Bathen, M. Linnarsson, M. Ghezellou, J. Ul Hassan, and L. Vines. Influence of carbon cap on self-diffusion in silicon carbide. Crystals 10(9), 752 (2020).
  • M.E. Bathen, L. Vines, and J. Coutinho. First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. J. Phys.: Condens. Matter 33, 075502 (2020). 
  •  J. Bonkerud, C. Zimmermann, P.M. Weiser, T. Aarholt, E.F. Verhoeven, L. Vines, E. Monakhov, and F. Herklotz. Fabrication and characterization of Schottky barrier diodes on rutile TiO2. Mater. Res. Express 7, 065903 (2020).
  • J. Borgersen, L. Vines, Y.K. Frodason, A. Kuznetsov, H. von Wenckstern, M. Grundmann, M. Allen, J. Zúñiga-Pérez, and K.M. Johansen. Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials. J. Phys.: Condens. Matter 32, 505701 (2020).
  • K. Bazioti, V.S. Olsen, A. Kuznetsov, L. Vines, and Ø. Prytz. Formation of N2 bubbles along grain boundaries in (ZnO)1−x(GaN)x: nanoscale STEM-EELS studies. Phys. Chem. Chem. Phys 22, 3779-3783 (2020).
  • Y.K. Frodason, K. M. Johansen, L. Vines, and J. B. Varley. Self-trapped hole and impurity-related broad luminescence in β-Ga2O3. Journal of Applied Physics 127, 075701 (2020).
  • D. Gogova-Petrova, V.S. Olsen, K. Bazioti, I.-H. Lee, Ø. Prytz, L. Vines, and A. Kuznetsov. High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates. CrystEngComm 22, 6268-6274 (2020).
  • S. Grini, H. Aboulfadl, N. Ross, C. Persson, C. Platzer-Björkman, M. Thuvander, and L. Vines, Lasse. Dynamic impurity redistributions in Kesterite absorbers. Phys. Status Solidi B 257, 2000062 (2020).
  • R.M. Karsthof, M.E. Bathen, A. Galeckas, and L. Vines. Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Phys. Rev. B 102, 184111 (2020). 
  • R. Kumar, K. Bergum, H.N. Riise, E. Monakhov, A. Galeckas, and B.G. Svensson. Impact of post annealing and hydrogen implantation on functional properties of Cu2O thin films for photovoltaic applications. Journal of Alloys and Compounds 825, 153982 (2020).
  • J.N. Kvalvik, J. Borgersen, P.-A.Hansen, and O. Nilsen. Area-selective atomic layer deposition of molybdenum oxide. Journal of Vacuum Science & Technology A 38, 052408 (2020).
  • J. Mayandi, T. Finstad, R. Venkatesan, P. Vajeeston, S. Karazhanov, and V. Venkatachalapathy. Carbon-dioxide as annealing atmosphere to retain the electrical properties of indium-tin oxide. Materials Letters 276, 128195 (2020).
  • J. Müting, V. Bobal, T. Neset Sky, L. Vines, and U. Grossner. Lateral straggling of implanted aluminum in 4H-SiC. Appl. Phys. Lett 116, 012101 (2020). 
  • V.M. Reinertsen, P.M. Weiser, Y.K. Frodason, M.E. Bathen, L. Vines, and K.M. Johansen. Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals. Appl. Phys. Lett 117, 232106 (2020).
  • G.C. Vasquez, M.E. Bathen, A. Galeckas, K. Bazioti, K.M. Johansen, D. Maestre, A. Cremades, Ø. Prytz, A.M. Moe, A. Kuznetsov, and L. Vines. Strain modulation of Si vacancy emission from SiC micro- and nanoparticles. Nano Lett 20, 8689-8695 (2020).
  • G.C. Vasquez, K.M. Johansen, A. Galeckas, L. Vines, and B.G. Svensson. Optical signatures of single ion tracks in ZnO. Nanoscale Adv 2, 724-733 (2020).
  • P.M. Weiser, E. Monakhov, H. Haug, M.S. Wiig, and R. Søndenå. Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process. Journal of Applied Physics 127, 065703 (2020).
  • J. Woerle, M.E. Bathen, T. Prokscha, A. Galeckas, H.M.Ayedh, L. Vines, and U. Grossner. Muon interaction with negative-U and high-spin-state defects: Differentiating between C and Si vacancies in 4H-SiC. Phys. Rev. Applied 14, 054053 (2020).
  • C. Zimmermann, Y.K. Frodason, A.W. Barnard, J.B. Varley, K. Irmscher, Z. Galazka, A. Karjalainen, W.E. Meyer, F.D. Auret, and L. Vines. Ti- and Fe-related charge transition levels in beta-Ga2O3. Appl. Phys. Lett 116, 072101 (2020).
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Published May 26, 2021 9:24 PM - Last modified Dec. 18, 2023 9:33 AM
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