It has been experimentally shown that monoisotopic silicon possesses improved thermal conductivity. Even more so, SiC, as electronic grade, possesses improved thermal conductivity compared to Si. Thus, to use SiC as substrate for power electronics and high frequency switches is a great advantage as such components tend to get very hot and suffer reduced life spans.
SiC-based electronic components are widely used in electronics components for space and at CERN applications where they are exposed to radiation. This project will investigate and compare the properties of mono-isotopic SiC and natural SiC when exposed to radiation. The main result of the project should give strong indications on whether or not mono-isotopic SiC is more resistant to radiation.
Samples of two different component types (PiN- and Shottky-diodes) made of natural Si and C and from isotopic pure 28Si and 12C will be tested and compared in this study. The operational characteristics of these devices will be measure before, during, and after irradiation. The project will require the interested master student to learn about and radiation effects in electronics, and to prepare and perform irradiation tests of the two components types. Irradiation tests will be performed in one of the main European test facilities.
The project will be carried out in collaboration with the Norwegian company ISOSILICON under a contract with the European Space Agency (ESA).